feb.1999 mitsubishi transistor modules QM300HA-2H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM300HA-2H ? i c collector current ........................ 300a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 b c e bx 108max. 93 0.3 4 f 6.5 bx b 9 16 ec 13 21 29 20 20 48 0.3 62max. 36 max. 41.5 max. 25.5 max. 2?6 2?4 label
feb.1999 ratings 1000 1000 1000 7 300 300 1980 16 3000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 460 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgm nm kgcm nm kgcm g mitsubishi transistor modules QM300HA-2H high power switching use insulated type conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 b terminal screw m4 bx terminal screw m4 typical value electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =300a, i b =6a Ci c =300a (diode forward voltage) i c =300a, v ce =2.8v/5v v cc =600v, i c =300a, i b1 =Ci b2 =6a transistor part diode part conductive grease applied typ. max. 4.0 4.0 400 2.5 3.5 1.85 3.0 15 3.0 0.063 0.3 0.04
feb.1999 ? 10 2 10 1 10 0 10 1 10 0 10 ? 10 3 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t j =25? t j =125? v be(sat) v ce(sat) i b =6a 7 5 3 2 7 5 3 2 7 5 3 2 2.2 2.6 3.0 3.4 3.8 1.8 v ce =2.8v t j =25? 400 300 200 100 0 0 500 12345 t j =25? i b =8.0a i b =1.0a i b =4.0a i b =0.4a i b =2.0a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v ce =2.8v t j =25? t j =125? v ce =5.0v 0 7 5 3 2 7 5 3 5 4 3 2 1 44 7 5 3 24 2 t j =25? t j =125? i c =300a i c =200a i c =400a 3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v cc =600v t j =25? t j =125? t f t on t s i b1 =? b2 =6a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM300HA-2H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 0 10 ? 10 ? 10 ? 10 1 10 0 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 7 5 4 3 2 2 10 7 5 4 3 ? 10 23457 0 10 23457 1 10 t j =25? t j =125? t f t s 7 1 10 7 v cc =600v i b1 =6a i c =300a 2 3 0 10 800 200 0 0 200 1000 600 400 400 600 800 t j =125? i b2 =?a i b2 =?2a 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 100 s dc 1m s 200 s 50 s 7 5 3 2 7 5 3 2 7 5 3 2 0.08 0.06 0.05 0.02 0 444 23457 0.03 0.07 0.04 0.01 7 5 3 2 7 5 3 2 7 5 3 2 1.6 0.4 0.8 1.2 2.0 0 t j =25? t j =125? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM300HA-2H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 3 10 2 10 1 10 0 10 0 10 3 10 2 10 1 10 2 10 1 10 0 10 ? 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr v cc =600v i b1 =? b2 =6a t j =25? t j =125? 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 3200 2800 2400 2000 1600 1200 800 400 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 444 23457 23457 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM300HA-2H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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